Supercontinuum generation in 800nm thick ultra-low loss silicon nitride waveguides - Université de Franche-Comté
Communication Dans Un Congrès Année : 2023

Supercontinuum generation in 800nm thick ultra-low loss silicon nitride waveguides

Résumé

We report SCG over 1.4 octave(from 620nm to 1.5µm) by pumping at 1060nm on a dispersion-engineered ultra low-loss SiN integrated waveguide with femtosecond pulse of 300W as peak power. We demonstrate SCG over 2.5 octaves(from 580nm to 2.05µm) when a wider and longer waveguide being pumped at 1550nm with peak power of 800W. We also experimentally observe a 4.5 octaves(from 500nm to 2.75µm) SCG by pumping at 1550nm on the 800nm thick SiN platform. We show the versatility of CEA LETI 800nm thick ultra-low loss SiN platform to SCG,
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Dates et versions

hal-04260085 , version 1 (27-10-2023)

Identifiants

Citer

Yijun Yang, Christian Lafforgue, Quentin Wilmart, Thibaut Sylvestre, Sylvain Guerber, et al.. Supercontinuum generation in 800nm thick ultra-low loss silicon nitride waveguides. SPIE Photonics West, Jan 2023, San Francisco, California, United States. ⟨10.1117/12.2657444⟩. ⟨hal-04260085⟩
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