Annealed Gallium-Doped Zinc Oxide (ZnO:Ga) Thin Films for Sub-ppm NO2 Sensing
Résumé
In this work, gallium-doped zinc oxide was deposited with a Radio Frequency Magnetron sputtering method on test platforms. The NO 2 sensing properties of the resulting devices were studied. The sensing properties of ZnO:Ga thin films were successfully stabilized through annealing in dry air, and then improved by either a thinning of the layer or an increase in the roughness of the substrate. The sensing response with an Rgas/Rair of 15 for 100 ppb of NO 2 under 50% humidity was obtained, with a response time below 10 min.
Domaines
Matériaux| Origine | Fichiers produits par l'(les) auteur(s) |
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